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IXTM11N80 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXTM11N80 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXTH11N80 IXTH13N80 IXTM11N80 IXTM13N80 V DS - Volts 1 10 100 1000 0.1 1 10 V SD - Volts 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 V CE - Volts 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 3500 4000 4500 Pulse Width - Seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 D=0.5 C rss C oss 100ms 10ms 1ms 100µs 10µs Limited by R DS(on) C iss Single Pulse Gate Charge - nCoulombs 0 25 50 75 100 125 150 0 2 4 6 8 10 V DS = 400V I D = 13A I G = 10mA T J = 125°C T J = 25°C D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 f = 1 MHz V DS = 25V Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area Fig.11 Transient Thermal Impedance Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage |
Similar Part No. - IXTM11N80 |
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Similar Description - IXTM11N80 |
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