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IF140A Datasheet(PDF) 1 Page - InterFET Corporation |
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IF140A Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  B-28 01/99 IF140, IF140A N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 375 mW Power Derating 3 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ72 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case At 25°C free air temperature: IF140 IF140A Process NJ14AL Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 20 – 20 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV – 0.2 – 0.2 nA VGS = – 15V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 6 – 6 V VDS = 15V, ID = 5 nA Gate Source Voltage VGS – 5 – 2.5 – 6 V VDS = 15V, ID = 50 µA Gate Source Forward Voltage VGS(F) 11 V VDS = Ø, IG = 1 mA Drain Saturation Current (Pulsed) IDSS 515515 mA VDS = 15V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs 4.5 4.5 mS VDS = 15V, VGS = ØV f = 1 kHz Common Source Output Conductance Yos 0.05 0.05 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 33 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Crss 0.6 0.6 pF VDS = 15V, VGS = ØV f = 1 MHz Transfer Capacitance Typ Typ Equivalent Short Circuit ¯eN 44 nV/ √Hz VDS = 12V, VGS = ØV f = 10 Hz Input Noise Voltage 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-28 |
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