 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
LTM4676A Datasheet(PDF) 33 Page - Linear Technology |
|
||||||||||||||||||||||||||||||
LTM4676A Datasheet(HTML) 33 Page - Linear Technology |
|
|
33 / 136 page  LTM4676A 33 4676afa For more information www.linear.com/LTM4676A operaTion sensor, whose temperature readback data and peak value are available over I2C (READ_TEMPERATURE_11, MFR_ READ_TEMPERATURE_1_PEAK1).Implementationofthe aforementioned is as follows: (1) local to the LTM4676A, electrically connect a 10nF X7R capacitor directly from TSNS1a to SGND; (2) differentially route a pair of traces from the LTM4676A's TSNS1a and SGND pins to the tar- get PNP transistor; (3) electrically connect the emitter of the PNP transistor to TSNS1a; (4) electrically connect the collector and base of the PNP transistor to SGND. Powerstagedutycyclereadbacktelemetryisavailableover I2C (READ_DUTY_CYCLEn registers). Computed channel input current readback is computed by the LTM4676A as: MFR_READ_IINn = READ_DUTY_CYCLEn • READ_IOUTn + MFR_IIN_OFFSETn Computed module input current readback is computed by the LTM4676A as: READ_IIN=MFR_READ_IIN0 +MFR_READ_IIN1 where MFR_IIN_OFFSETn is a register value representing the SVIN input bias current. The SVIN current is not dig- itized by the module. The factory NVM-default value of MFR_IIN_OFFSETn is 30.5mA, representing the contribu- tion of current drawn by each of the module’s channels on the SVIN pin, when the power stages are operating in forced continuous mode at the factory-default switching frequency of 500kHz. See Table 8 in the Applications In- formation section for recommended MFR_IIN_OFFSETn setting vs Switching Frequency. The aforementioned method by which input current is calculated yields an ac- curate current readback value even at light load currents, but only as long as the module is configured for forced continuous operation (NVM-factory default). SVIN and peak SVIN readback telemetry is accessible via I2C in the READ_VIN and MFR_VIN_PEAK registers, respectively. The power stage switch nodes are brought out on the SWn pin for functional operation monitoring and for optional installation of a resistor-capacitor snubber circuit (termi- nated to GND) for reduced EMI. Internal 2.2nF snubber capacitors connected directly to the switch nodes further facilitate implementation of a snubber network, if desired. See the Application Information section for details. The LTM4676A features a write protect (WP) pin. If WP is opencircuitorlogichigh,I2Cwritesareseverelyrestricted: onlyI2CwritestothePAGE,OPERATION,CLEAR_FAULTS, MFR_CLEAR_PEAKS, and MFR_EE_UNLOCK commands are supported, with the exception that individual fault bits can be cleared by writing a “1b” to the respective bits in the STATUS_* registers. Register reads are never restricted. Not to be confused with the WP pin, the LTM4676A fea- tures a WRITE_PROTECT register, which is also used to restrict I2C writes to register contents. Refer to Appendix C: PMBus Command Details for details. The WP pin and theWRITE_PROTECTregisterprovidealevelofprotection againstaccidentalchangestoRAMandEEPROMcontents. TheLTM4676Asupportsallpossible7-bitslaveaddresses. The factory NVM-default slave address is 0x4F. The lower four bits of the LTM4676A’s slave address can be altered from this default value by connecting a resistor from the ASEL pin to SGND. See Table 5 in the Applications Information section for details. Bits[6:4] can be altered by writing to the SLAVE_ADDRESS command. The value of the SLAVE_ADDRESS command can be stored to NVM, however, the lower four bits of the SLAVE_ADDRESS is always dictated by the ASEL resistor pin-strap setting. Up to four LTM4676A modules (8 channels) can be par- alleled, suitable for powering ~100A loads such as CPUs and GPUs. (See Figure 39) The LTM4676A can be paral- leled with LTM4620A or LTM4630 modules, as well (see Figure 40and Figure 41). EEPROM The LTM4676A’s control IC contains an internal EEPROM (non-volatile memory, NVM) with Error Correction Coding (ECC) tostoreconfigurationsettingsandfaultloginforma- tion. EEPROM endurance retention and mass write opera- tion time are specified in the Electrical Characteristics and Absolute Maximum Ratings sections. Write operations at TJ < 0°C or at TJ > 85°C are possible although the Electri- cal Characteristics are not guaranteed and the EEPROM retention characteristics may be degraded. Read opera- tions performed at junction temperatures between –40°C and 125°C do not degrade the EEPROM. The fault logging function, which is useful in debugging system problems |
Similar Part No. - LTM4676A |
|
Similar Description - LTM4676A |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
