NTE55 datasheet(2/2 Pages) NTE

Part #	NTE55

Description	Silicon Complementary Transistors High Frequency Driver for Audio Amplifier

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage

VCE(sus) IC = 10mA, IB = 0, Note 2

150

–

V

Collector Cutoff Current

ICEO

VCE = 150V, IB = 0

–

0.1

mA

ICBO

VCE = 150V, IE = 0

–

10

µA

Emitter Cutoff Current

IEBO

VCE = 150V, IC = 0

–

10

µA

ON Characteristics (Note 2)

DC Current Gain

hFE

VCE = 2V, IC = 0.1A

40

–

VCE = 2V, IC = 2A

40

–

VCE = 2V, IC = 0.1A

40

–

VCE = 2V, IC = 0.1A

20

–

DC Current Gain Linearity

hFE

VCE from 2V to 20V,

IC from 0.1A to 3A

–

2

–

NPN to PNP

–

3

–

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 1A, IB = 0.1A

–

0.5

V

Base–Emitter ON Voltage

VBE(on)

VCE = 2V, IC = 1A

–

1

V

Dynamic Characteristics

Current Gain–Bandwidth Product

ft

VCE = 10V, IC = 500mA,

ftest = 10MHz, Note 3

30

–

MHz

Note 2. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

Note 3. fT = |hfe| ftest

.420 (10.67)

Max

.500

(12.7)

Max

.500

(12.7)

Min

.250 (6.35)

Max

.147 (3.75)

Dia Max

.070 (1.78) Max

.100 (2.54)

Base

Collector/Tab

Emitter

.110 (2.79)

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