S

S

D

G

20

44

19

4

Excelics

EFA060B-70

DATA SHEET

Low Distortion GaAs Power FET

•

NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE

•

+24.0dBm TYPICAL OUTPUT POWER

•

7.5 dB TYPICAL POWER GAIN AT 12GHz

•

0.3 X 600 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

Vds=6V, Ids=50% Idss

f=18GHz

22.0

24.0

24.0

dBm

Gain at 1dB Compression

f=12GHz

Vds=6V, Ids=50% Idss

f=18GHz

6.0

7.5

5.0

dB

PAE

Power Added Efficiency at 1dB Compression

Vds=6V, Ids=50% Idss

f=12GHz

33

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

100

170

240

mA

Gm

Transconductance

Vds=3V, Vgs=0V

70

90

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=1.5mA

-2.0

-3.5

V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-10

-15

V

BVgs

Source Breakdown Voltage Igs=1.0mA

-6

-14

V

Rth

Thermal Resistance

175

*

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

10V

6V

Vgs

Gate-Source Voltage

-6V

-4V

Ids

Drain Current

Idss

110mA

Igsf

Forward Gate Current

15mA

2.5mA

Pin

Input Power

22dBm

@ 3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

780mW

650mW

Note: 1 Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

All Dimensions In mils.