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CM3121-02SH Datasheet(PDF) 5 Page - California Micro Devices Corp |
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CM3121-02SH Datasheet(HTML) 5 Page - California Micro Devices Corp |
5 / 11 page © 2004 California Micro Devices Corp. All rights reserved. 11/12/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.calmicro.com 5 CM3121 PRELIMINARY Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted. Note 2: Note that the IDDQ current specified is the load current output from the VDDQ pin. VDDQ also supplies current internally to the VTT regulator when it is sourcing current. The maximum source current can be up to 0.5A. So the maximum total current from the VDDQ regulator is the external VDDQ current IDDQ added to the maximum VTT sourcing current ITT. All load currents are specified as such, but the VDDQ current limit is specified at a current just above the total maximum current. DDR-II Specifications VTT Regulator Parameters VTT Output Voltage Range VDDQ = 2.5V, ITT = 0.01A, 1.20 1.25 1.30 V VTT REF Output Voltage Range VDDQ = 2.500V, ITT = 0.01A 1.225 1.250 1.275 V VTT LD Load Regulation TA = 25°C, VDDQ = 2.5V, 0.01A ≤ ITT ≤ ±0.5A -1.0 - 1.0 % VTT LINE Line Regulation TA = 25°C, ITT = 0.01A, 2.8V ≤ VCC ≤ 3.6V, Note 2 -1.0 - 1.0 % eN TT Output Noise Voltage BW = 10Hz - 100kHz, CTT = 10µF51 µ Vrms ITT LIM Current Limit 0.6 0.8 A ITT SC Short Circuit Current VTT < 0.3V 0.3 A ELECTRICAL OPERATING CHARACTERISTICS (CONT’D) (SEE NOTE1) ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS General Parameters TOVER Shutdown Junction Temperature - 150 - °C THYST Junction Temp Hysterisis IC in shutdown - 25 - °C ICCN Normal Mode VCC Supply Current EN_DDR = logic "0", 700 1100 µA ICCQ Shutdown Mode VCC Supply Current EN_DDR = logic "1", VDDQ = 0V, VTT = 0V 210 µA VIH EN_DDR Input High Threshold VCC =3.3V 2.0 V VIL EN_DDR Input Low Threshold VCC =3.3V 0.4 V UVLO Under Voltage Lock-Out IDDQ = 10mA 1.8 V tRISE VDDQ Rise TIme VCC = 3.3V, CDDQ = 10µF0.5 ms |
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