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BUK764R0-55B Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK764R0-55B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page Philips Semiconductors BUK75/764R0-55B TrenchMOS™ standard level FET Product data Rev. 02 — 30 September 2002 9 of 15 9397 750 10276 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. VGS =0V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 03nh20 0 20 40 60 80 100 02 46 VGS (V) ID (A) Tj = 175 ºC Tj = 25 ºC 03nh18 0 2 4 6 8 10 0 2040 6080 100 QG (nC) VGS (V) VDD = 14 (V) VDD = 44 (V) 03nh17 0 20 40 60 80 100 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) ID (A) Tj = 175 ºC Tj = 25 ºC |
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