BCM857BS datasheet(4/8 Pages) PHILIPS

Part #	BCM857BS

Description	PNP matched double transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9397 750 14723

Product data sheet

Rev. 02 — 11 April 2005

4 of 8

Philips Semiconductors

BCM857BS

PNP matched double transistor;

∆h

FE = 10 %

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −30 V; IE = 0 A

-

−15

nA

VCB = −30 V; IE = 0 A;

Tj = 150 °C

--

−5

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

-

−100

nA

hFE

DC current gain

VCE = −5 V; IC = −10 µA

-

250

-

VCE = −5 V; IC = −2 mA

200

290

450

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

-

−50

−200

mV

IC = −100 mA; IB = −5 mA

-

−200

−400

mV

VBEsat

base-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

-

−760

-

mV

IC = −100 mA; IB = −5 mA

[1] -

−920

-

mV

VBE

base-emitter voltage

VCE = −5 V; IC = −2 mA

-600

−650

−700

mV

VCE = −5 V; IC = −10 mA

-

−760

mV

Cc

collector capacitance VCB = −10 V; IE =ie =0A;

f = 1 MHz

-

2.2

pF

Ce

emitter capacitance

VEB = −0.5 V; IC =ic =0A;

f = 1 MHz

-10

-

pF

fT

transition frequency

VCE = −5 V; IC = −10 mA;

f = 100 MHz

100

250

-

MHz

Per device

∆hFE

DC current gain

matching

VCE = −5 V; IC = −2 mA

-

10

%

∆VBE

base-emitter voltage

matching

VCE = −5 V; IC = −2 mA

-

2

mV

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