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BCM857BS Datasheet(PDF) 4 Page - NXP Semiconductors |
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BCM857BS Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 9397 750 14723 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 11 April 2005 4 of 8 Philips Semiconductors BCM857BS PNP matched double transistor; ∆h FE = 10 % 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C -- −5 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −5 V; IC = −10 µA - 250 - VCE = −5 V; IC = −2 mA 200 290 450 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −50 −200 mV IC = −100 mA; IB = −5 mA - −200 −400 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −760 - mV IC = −100 mA; IB = −5 mA [1] - −920 - mV VBE base-emitter voltage VCE = −5 V; IC = −2 mA -600 −650 −700 mV VCE = −5 V; IC = −10 mA - - −760 mV Cc collector capacitance VCB = −10 V; IE =ie =0A; f = 1 MHz - - 2.2 pF Ce emitter capacitance VEB = −0.5 V; IC =ic =0A; f = 1 MHz -10 - pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 250 - MHz Per device ∆hFE DC current gain matching VCE = −5 V; IC = −2 mA - - 10 % ∆VBE base-emitter voltage matching VCE = −5 V; IC = −2 mA - - 2 mV |
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