ZXMN10A09K

SEMICO NDUC TORS

ISSUE 6 - JANUARY 2005

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

100

V

Zero gate voltage drain current

1

Gate-body leakage

100

nA

Gate-source threshold voltage

2.0

4.0

V

Static drain-source on-state resistance

(1)

0.085

0.100

Forward transconductance

(1) (3)

10.7

S

DYNAMIC

(3)

Input capacitance

1313

pF

f=1MHz

Output capacitance

83

pF

Reverse transfer capacitance

56

pF

SWITCHING

(2) (3)

Turn-on-delay time

6.8

ns

Rise time

5.3

ns

Turn-off delay time

27.5

ns

Fall time

12.3

ns

Total gate charge

17.2

nC

Total gate charge

26

nC

Gate-source charge

5.6

nC

Gate drain charge

7.6

nC

SOURCE-DRAIN DIODE

Diode forward voltage

(1)

0.85

0.95

V

Reverse recovery time

(3)

40

ns

di/dt=100A/ s

Reverse recovery charge

(3)

62

nC

NOTES

(1) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.