ZXMN6A09K

SEMICO NDUC TORS

ISSUE 3 - JANUARY 2004

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

60

V

Zero gate voltage drain current

1

Gate-body leakage

100

nA

Gate-source threshold voltage

1.0

V

Static drain-source on-state resistance

(1)

0.045

0.070

Forward transconductance

(1) (3)

15

S

DYNAMIC

(3)

Input capacitance

1426

pF

f=1MHz

Output capacitance

134

pF

Reverse transfer capacitance

64

pF

SWITCHING

(2) (3)

Turn-on-delay time

4.8

ns

(refer to test circuit)

Rise time

4.6

ns

Turn-off delay time

32.5

ns

Fall time

14.5

ns

Total gate charge

15

nC

Total gate charge

29

nC

Gate-source charge

7.0

nC

Gate drain charge

4.7

nC

SOURCE-DRAIN DIODE

Diode forward voltage

(1)

0.85

0.95

V

Reverse recovery time

(3)

25.6

ns

di/dt=100A/ s

Reverse recovery charge

(3)

26.0

nC

NOTES

(1) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.