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ZXMN6A09K Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMN6A09K Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 7 page ZXMN6A09K SEMICO NDUC TORS ISSUE 3 - JANUARY 2004 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-source breakdown voltage V(BR)DSS 60 V ID= 250 A, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 60V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) 1.0 V ID= 250 A, VDS=VGS Static drain-source on-state resistance (1) RDS(on) 0.045 VGS= 10V, ID= 7.3A 0.070 VGS= 4.5V, ID =5.6A Forward transconductance (1) (3) gfs 15 S VDS= 15V, ID= 7.3A DYNAMIC (3) Input capacitance Ciss 1426 pF VDS= 30V, VGS=0V f=1MHz Output capacitance Coss 134 pF Reverse transfer capacitance Crss 64 pF SWITCHING (2) (3) Turn-on-delay time td(on) 4.8 ns VDD= 30V, ID=1A RG≅6.0 ,VGS= 10V (refer to test circuit) Rise time tr 4.6 ns Turn-off delay time td(off) 32.5 ns Fall time tf 14.5 ns Total gate charge Qg 15 nC VDS= 30V, VGS= 4.5V ID= 5.6A Total gate charge Qg 29 nC VDS= 30V, VGS= 10V ID= 7.3A Gate-source charge Qgs 7.0 nC Gate drain charge Qgd 4.7 nC SOURCE-DRAIN DIODE Diode forward voltage (1) VSD 0.85 0.95 V Tj=25°C, IS= 6.6A, VGS=0V Reverse recovery time (3) trr 25.6 ns Tj=25°C, IS= 3A, di/dt=100A/ s Reverse recovery charge (3) Qrr 26.0 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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