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PI4884 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PI4884 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page Philips Semiconductors PI4884 TrenchMOS™ logic level FET Product data Rev. 02 — 12 April 2002 3 of 12 9397 750 09583 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. VGS ≥ 5V Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp =25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa17 0 40 80 Pder 120 0 50 100 150 200 Tsp (ºC) (%) 03aa25 0 40 80 120 0 50 100 150 200 Tsp ( oC) Ider (%) P der P tot P tot 25 C ° () ----------------------- 100% × = I der I D I D25 C ° () ------------------- 100% × = Limit RDSon = VDS / ID DC tp = 100 µs 1 ms 10 ms VDS (V) 102 10 1 10-1 ID (A) 102 10 10-1 1 10-2 003aaa160 10 µs 1 s |
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