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CNZ2253 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # CNZ2253
Description  Reflective Photosensor
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

CNZ2253 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Reflective Photosensors (Photo Reflectors)
CNZ2253 (ON2253)
Reflective Photosensor
Overview
CNZ2253 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si Darlington
phototransistor is used as the light detecting element. The two
elements are located parallel in the same direction and objects are
detected when passing in front of the device.
Features
High sensitivity
Small size and light weight
ø2.2
±0.2
Mark for indicating
LED side
10.6
±0.3
9.6
±0.3
7.5
±0.2
(3.2)
(7.2)
2
3
14
ø0.3
±0.05
*2-0.9
±0.15
ø0.45
±0.05
Unit : mm
Pin connection
14
3
2
(Note)
1. (
) Dimension is reference
2. * is dimension at the root of leads
*1 Input power derating ratio is
1.0 mW/˚C at Ta
≥ 25˚C.
*2 Output power derating ratio is
1.34 mW/˚C at Ta
≥ 25˚C.
10%
90%
tr
tf
*
2 Transfer characteristics measurement circuit
(Ambient light is shut off completely)
RL
IF
IC
VCC
d = 3 mm
Standard white paper
(Reflective ratio 90%)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
VR
3V
emitting diode)
Forward current (DC)
IF
50
mA
Power dissipation
PD*1
75
mW
Collector to emitter voltage
VCEO
20
V
Output (Photo Emitter to collector voltage
VECO
5V
transistor)
Collector current
IC
30
mA
Collector power dissipation
PC*2
100
mW
Temperature
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg –30 to +100
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
VF
IF = 50mA
1.2
1.5
V
characteristics
Reverse current (DC)
IR
VR = 3V
10
µA
Capacitance between terminals
Ct
VR = 0V, f = 1MHz
50
pF
Output characteristics Collector cutoff current
ICEO
VCE = 10V
0.5
µA
Transfer
Collector current
IC*1*2 VCC = 5V, IF = 10mA, RL = 100Ω
330
mA
characteristics
Response time
tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω
150
µs
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 1mA
1.5
V
*3 Time required for the collector current to increase
from 10% to 90% of its final value.
*4 Time required for the collector current to decrease
from 90% to 10% of its initial value.
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of position and edge
Detection of coin and bill
Start, end mark detection of magnetic tape
*1 IC classifications
Class
Q
R
S
IC (mA)
3 to 9
6 to 18
12 to 30
Note) The part number in the parenthesis shows conventional part number.


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