MRF18085AR3 datasheet(4/8 Pages) MOTOROLA

Part #	MRF18085AR3

Description	RF Power Field Effect Transistors

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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4 / 8 page

5-4

RF Device Data

Freescale Semiconductor

MRF18085AR3 MRF18085ALSR3

TYPICAL CHARACTERISTICS

1000

10

17

0

Pout, OUTPUT POWER (WATTS)

Figure 3. Power Gain versus Output Power

16

15

14

13

12

11

1

10

100

Pout, OUTPUT POWER (WATTS)

Figure 4. Power Gain versus Output Power

1000

9

17

1

TC = 25_C

50

_C

Pout, OUTPUT POWER (WATTS)

Figure 5. Power Gain versus Output Power

VDD = 26 Vdc

IDQ = 800 mA

f = 1840 MHz

100

10

16

15

14

13

12

11

10

85

_C

1900

0

120

1800

Pin = 8 W

f, FREQUENCY (MHz)

Figure 6. Output Power versus Frequency

VDD = 26 Vdc

IDQ = 800 mA

TC = 25_C

4 W

1 W

0.5 W

100

80

60

40

20

1820

1840

1860

1880

1950

10

17

1750

−28

0

Gps @ 30 W

f, FREQUENCY (MHz)

Figure 7. Power Gain versus Frequency

VDD = 26 Vdc

IDQ = 800 mA

TC = 25_C

Gps @ 80 W

IRL @ 80 W

IRL @ 30 W

16

−4

15

−8

14

−12

13

−16

12

−20

11

−24

1800

1850

1900

η

1000

10

16

0.1

0

60

Gps

Pout, OUTPUT POWER (WATTS)

Figure 8. Power Gain and Efficiency versus

Output Power

VDD = 26 Vdc

IDQ = 800 mA

f = 1840 MHz

TC = 25_C

15

50

14

40

13

30

12

20

11

10

1

10

100

1000

8

17

0.1

24 V

IDQ = 800 mA

f = 1840 MHz

TC = 25_C

16

15

14

13

12

11

10

9

1

10

100

VDD = 20 V

28 V

32 V

IDQ = 1000 mA

VDD = 26 Vdc

f = 1840 MHz

TC = 25_C

800 mA

600 mA

400 mA

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MRF18085AR3 Datasheet(PDF) 4 Page - Motorola, Inc

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