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2N2219A Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N2219A
Description  NPN SWITCHING SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices
Qualified Level
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N2218
2N2219
2N2218A; L
2N2219A; L
Unit
Collector-Emitter Voltage
VCEO
30
50
Vdc
Collector-Base Voltage
VCBO
60
75
Vdc
Emitter-Base Voltage
VEBO
5.0
6.0
Vdc
Collector Current
IC
800
mAdc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
0.8
3.0
W
W
Operating & Storage Junction Temp. Range
Top, Tstg
-55 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
59
0C/W
1) Derate linearly 4.6 mW/
0C above TA > +250C
2) Derate linearly 17.0 mW/
0C above TC > +250C
TO- 39* (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
TO-5*
2N2218AL,
2N2219AL
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IE = 10 mAdc
2N2218; 2N2219
2N2218A; L; 2N2219A; L
V(BR)CEO
30
50
Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N2218; 2N2219
VEB = 6.0 Vdc
2N2218A; L; 2N2219A; L
VEB = 4.0 Vdc
All Types
IEBO
10
10
10
µAdc
ηAdc
Collector-Base Cutoff Current
VCE = 30 Vdc
2N2218; 2N2219
VCE = 50 Vdc
2N2218A; L; 2N2219A; L
ICES
10
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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