AP1098

2.4~2.5 GHz Power Amplifier

2004.07.19 Preliminary

For more information,please contact us at:

Sales Dept.

Tel: +886-2-2698-1022

e-mail: sales@rfintc.com

© 2003 RF Integrated Corporation. All rights reserved.

RF integrated Corp. reserves the right to make any changes to the specifications without notice.

2of 5

RF

IC

Pr

eli

mi

nar

y

Electrical Characteristics

Under Vc=3.3V, Vref=3V, Ta=25ºC

2

Input VSWR

dBc

-56

@Pout=23dBm, CCK/11Mbps

Side Lobe

mA

25

Icq

Quiescent current

2.5

Output VSWR

mA

85

165

@ Pout=19dBm, 64QAM/54Mbps

@ Pout=23dBm, CCK/11Mbps

Icc

Total current

@Pout=19dBm, 64QAM/54Mbps

@Pout=23dBm, CCK/11Mbps

@Pout=23dBm, CCK/11Mbps

@ Pout=19dBm, 64QAM/54Mbps

@ Pout=19dBm, 64QAM/54Mbps

@Icq=25mA

Test conditions

PAE

EVM

Gp

Iref

f

Symbol

28

37

-36

3

25

0.7

Typ.

%

PAE @ linear

power

2.4

Min.

%

EVM at Output

power 19dBm

dBc

Side Lobe

dB

Power Gain

mA

Bias control

reference current

GHz

2.5

Freq.

Unit

Max.

Parameter

Absolute Maximum Ratings

Important Note:

The information provided in this datasheet is

deemed to be accurate and reliable only at present

time. RF Integrated Corp. reserves the right to make

any changes to the specifications in this datasheet

without prior notice.

°C

-40 to +125

Storage Temperature

°C

-40 to +85

Operating Ambient

Temperature

dBm

+5

RF Input Power

mA

280

DC Supply Current For

Collector

V

+5

DC Power Supply For

Collector

Unit

Rating

Parameter