EEPROM

AS58C1001

Austin Semiconductor, Inc.

AS58C1001

Rev. 4.0 3/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

8

AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE

WRITE OPERATIONS

SYMBOL

MIN

MAX

UNITS

0

---

ns

7

0

---

ns

8

250

---

ns

7

250

---

ns

150

---

ns

100

---

ns

10

---

ns

7

0

---

ns

0

---

ns

0

---

ns

10

---

ms

100

---

µs

120

---

ns

100

---

µs

10

1

---

µs

Address Hold Time

Data Setup Time

Vcc to RES\ Setup Time

Time to Device Busy

RES\ to Write Setup Time

PARAMETER

Address Setup Time

Chip Enable to Write Setup Time

Byte Load Window

Data Hold Time

Chip Enable Hold Time

Out Enable to Write Setup Time

Write Pulse Width

Output Enable Hold Time

Write Cycle Time

AC TEST CONDITIONS

Input Pulse Levels............................................0V to 3V

Input Rise and Fall Times....................................<20ns

Input Timing Reference Level................................1.5V

Output Reference Level..........................................1.5V

Output Load................................................See Figure 1

Q

100pF

1 TTL GATE EQ.

Figure 1

OUTPUT LOAD EQUIVALENT

NOTES:

1. Relative to Vss

2. V

IN

min = -3.0V for pulse widths <50ns

3. V

IL

min = -1.0V for pulse widths <50ns

4. I

IL

on RES\ = 100ua MAX

5. t

OF

is defined as the time at which E the output becomes and

open circuit and data is no longer driven.

6. Use this device in longer cycle than this value

7. WE\ controlled operation

8. CE\ controlled operation

9. RES\ pin V

IH

is V

H

10. Reference only, not tested