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NTE46 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE46
Description  Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 10mA, VCE = 5V
10,000
IC = 100mA, VCE = 5V
10,000
Collector–Emitter Saturation Voltage
VCE(sat) IC = 10mA, IB = 0.01mA
0.7
1.2
V
IC = 100mA, IB = 0.1mA
0.8
1.5
V
Base–Emitter ON Voltage
VBE(on)
IC = 100mA, VCE = 5V
1.4
2.0
V
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
IC = 10mA, VCE = 5V,
f = 100MHz, Note 2
125
200
MHz
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 100kHz
5.0
8.0
pF
Note 1. Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2%
Note 2. fT = hfe  ftest
B
C
E
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max




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