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MM74HC640N Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # MM74HC640N
Description  Inverting Octal TRI-STATE Transceiver
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

MM74HC640N Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes12)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VCC)
b
05 to a70V
DC Input Voltage DIR and G pins (VIN) b15 to VCCa15V
DC Output Voltage (VIN VOUT)
b
05 to VCCa05V
Clamp Diode Current (ICD)
g
20 mA
DC Output Current per pin (IOUT)
g
35 mA
DC VCC or GND Current per pin (ICC)
g
70 mA
Storage Temperature Range (TSTG)
b
65 Cto a150 C
Power Dissipation (PD)
(Note 3)
600 mW
SO Package only
500 mW
Lead Temperature (TL)
(Soldering 10 seconds)
260 C
Operating Conditions
Min
Max
Units
Supply Voltage (VCC)2
6
V
DC Input or Output Voltage
(VIN VOUT)0
VCC
V
Operating Temp Range (TA)
MM74HC
b
40
a
85
C
MM54HC
b
55
a
125
C
Input RiseFall Times
VCCe20V
(tr tf)
1000
ns
VCCe45V
500
ns
VCCe60V
400
ns
DC Electrical Characteristics (Note 4)
TAe25 C
74HC
54HC
Symbol
Parameter
Conditions
VCC
TAeb40 to 85 CTAeb55 to 125 C Units
Typ
Guaranteed Limits
VIH
Minimum High Level Input
20V
15
15
15
V
Voltage
45V
315
315
315
V
60V
42
42
42
V
VIL
Maximum Low Level Input
20V
05
05
05
V
Voltage
45V
135
135
135
V
60V
18
18
18
V
VOH
Minimum High Level Output
VINeVIH or VIL
Voltage
lIOUTls20 mA
20V
20
19
19
19
V
45V
45
44
44
44
V
60V
60
59
59
59
V
VINeVIH or VIL
lIOUTls60 mA
45V
42
398
384
37
V
lIOUTls78 mA
60V
57
548
534
52
V
VOL
Maximum Low Level Output
VINeVIH or VIL
Voltage
lIOUTls20 mA
20V
0
01
01
01
V
45V
0
01
01
01
V
60V
0
01
01
01
V
VINeVIH or VIL
lIOUTls60 mA
45V
02
026
033
04
V
lIOUTls78 mA
60V
02
026
033
04
V
IIN
Input Leakage
VINeVCC or GND
60V
g
01
g
10
g
10
m
A
Current (G and DIR)
IOZ
Maximum TRI-STATE Output
VOUTeVCC or GND 60V
g
05
g
50
g
10
m
A
Leakage Current
Enable GeVIH
ICC
Maximum Quiescent Supply
VINeVCC or GND
60V
80
80
160
m
A
Current
IOUTe0 mA
Note 1
Maximum Ratings are those values beyond which damage to the device may occur
Note 2
Unless otherwise specified all voltages are referenced to ground
Note 3
Power Dissipation temperature derating
plastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package b12 mW C from 100 Cto125 C
Note 4
For a power supply of 5V g10% the worst case output voltages (VOH and VOL) occur for HC at 45V Thus the 45V values should be used when designing
with this supply Worst case VIH and VIL occur at VCCe55V and 45V respectively (The VIH value at 55V is 385V) The worst case leakage current (IIN ICC and
IOZ) occur for CMOS at the higher voltage and so the 60V values should be used
VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89
2


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