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IGW60T120 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IGW60T120
Description  Low Loss IGBT in Trench and Fieldstop technology
Download  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IGW60T120 Datasheet(HTML) 7 Page - Infineon Technologies AG

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IGW60T120
^
TrenchStop Series
Power Semiconductors
7
Preliminary / Rev. 1 Jul-02
20A
40A
60A
80A
0,0mJ
5,0mJ
10,0mJ
15,0mJ
20,0mJ
25,0mJ
30,0mJ
E
ts*
E
off
*) E
on and Etsinclude losses
due to diode recovery
E
on*
5Ω
15Ω
25Ω
35Ω
5 mJ
10 mJ
15 mJ
20 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=10Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=60A,
Dynamic test circuit in Figure E)
50°C
100°C
150°C
4mJ
6mJ
8mJ
10mJ
12mJ
14mJ
16mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
400V
500V
600V
700V
800V
5mJ
10mJ
15mJ
20mJ
25mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=60A, RG=10Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=60A, RG=10Ω,
Dynamic test circuit in Figure E)


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