NT5SV16M4DT

NT5SV8M8DT

NT5SV4M16DT

64Mb Synchronous DRAM

REV 1.1

10/01

1

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Features

• High Performance:

• Single Pulsed RAS Interface

• Fully Synchronous to Positive Clock Edge

• Four Banks controlled by BS0/BS1 (Bank Select)

• Programmable CAS Latency: 2, 3

• Programmable Burst Length: 1, 2, 4, 8, Full page

• Programmable Wrap: Sequential or Interleave

• Multiple Burst Read with Single Write Option

• Automatic and Controlled Precharge Command

• Data Mask for Read/Write control (x4, x8)

• Dual Data Mask for byte control (x16)

• Auto Refresh (CBR) and Self Refresh

• Suspend Mode and Power Down Mode

• Standard Power operation

• 4096 refresh cycles/64ms

• Random Column Address every CK (1-N Rule)

• Single 3.3V

± 0.3V Power Supply

• LVTTL compatible

• Package:

54-pin 400 mil TSOP-Type II

Description

The NT5SV16M4DT, NT5SV8M8DT, and NT5SV4M16DT

are four-bank Synchronous DRAMs organized as 4Mbit x 4

I/O x 4 Bank, 2Mbit x 8 I/O x 4 Bank, and 1Mbit x 16 I/O x 4

Bank, respectively. These synchronous devices achieve

high-speed data transfer rates of up to 200MHz by employing

a pipeline chip architecture that synchronizes the output data

to a system clock. The chip is fabricated with NTC’s

advanced 64Mbit single transistor CMOS DRAM process

technology.

The device is designed to comply with all JEDEC standards

set for synchronous DRAM products, both electrically and

mechanically. All of the control, address, and data input/out-

put (I/O or DQ) circuits are synchronized with the positive

edge of an externally supplied clock.

RAS, CAS, WE, and CS are pulsed signals which are exam-

ined at the positive edge of each externally applied clock

(CK). Internal chip operating modes are defined by combina-

tions of these signals and a command decoder initiates the

necessary timings for each operation. A fourteen bit address

bus accepts address data in the conventional RAS/CAS mul-

tiplexing style. Twelve row addresses (A0-A11) and two bank

select addresses (BS0, BS1) are strobed with RAS. Eleven

column addresses (A0-A9) plus bank select addresses and

A10 are strobed with CAS. Column address A9 is dropped on

the x8 device, and column addresses A8 and A9 are dropped

on the x16 device.

Prior to any access operation, the CAS latency, burst length,

and burst sequence must be programmed into the device by

address inputs A0-A11, BS0, BS1 during a mode register set

cycle. In addition, it is possible to program a multiple burst

sequence with single write cycle for write through cache oper-

ation.

Operating the four memory banks in an interleave fashion

allows random access operation to occur at a higher rate

than is possible with standard DRAMs. A sequential and gap-

less data rate of up to 200MHz is possible depending on

burst length, CAS latency, and speed grade of the device.

Simultaneous operation of both decks of a stacked device is

allowed, depending on the operation being done. Auto

Refresh (CBR) and Self Refresh operation are supported.

-6K

-7K

-7

Units

Clock

Frequency

166

133

143

133

143

MHz

6

7.5

7

7.5

7

ns

CL

CAS Latency

CL=3

CL=2

CL=3

CL=2

CL=3

CKs

Clock Access

---

—

---

—

—

ns

Clock Access

Time

2

5.4

5.4

5.4

5.4

5.4

ns

1. Terminated load. See AC Characteristics on page 16.

2. Unterminated load. See AC Characteristics on page 16.