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M11B11664A-30T Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers |
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5 / 15 page (OLWH07 M11B11664A Elite Memory Technology Inc Publication Date : Dec. 2000 Revision : 1.3 5/15 (Continued) -25 -30 -35 -40 UNIT Notes PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX Read Command Setup Time tRCS 0 0 0 0 ns 15,18 Read Command Hold Time Reference to CAS tRCH 0 000 ns 9,15,19 Read Command Hold Time Reference to RAS tRRH 0 000 ns 9 CAS to Output in Low-Z tCLZ 3 3 3 3 ns 20 Output Buffer Turn-off Delay From CAS or RAS tOFF1 315 315 3 15 3 15 ns 10,17,20 Output Buffer Turn-off to OE tOFF2 6 8 8 8 ns 17,26 Write Command Setup Time tWCS 0 0 0 0 ns 11,15,18 Write Command Hold Time tWCH 5 5 5 5 ns 15,25 Write Command Hold Time(Reference to RAS ) tWCR 22 26 30 34 ns 15 Write Command Pulse Width tWP 5 5 5 5 ns 15 Write Command to RAS Lead Time tRWL 7 8 9 10 ns 15 Write Command to CAS Lead Time tCWL 5 6 7 8 ns 15,19 Data-in Setup Time tDS 0 0 0 0 ns 12,20 Data-in Hold Time tDH 5 5 5 5 ns 12,20 Data-in Hold Time (Reference to RAS ) tDHR 22 26 30 34 ns RAS to WE Delay Time tRWD 34 46 51 56 ns 11 Column Address to WE Delay Time tAWD 21 31 34 36 ns 11 CAS to WE Delay Time tCWD 17 25 26 27 ns 11,18 Transition Time (rise or fall) tT 1.5 50 1.5 50 2.5 50 2.5 50 ns 2,3 Refresh Period (256 cycles) tREF 4 44 4 ms RAS to CAS Precharge Time tRPC 10 10 10 10 ns CAS Setup Time(CBR REFRESH) tCSR 5 10 10 10 ns 1,18 CAS Hold Time(CBR REFRESH) tCHR 7 10 10 10 ns 1,19 OE Hold Time From WE During Read-Mode- Write Cycle tOEH 4 4 4 5 ns 16 OE Low to CAS High Setup Time tOES 4 445 ns OE High Hold Time From CAS High tOEHC 2 222 ns OE Precharge Time tOEP 2 222 ns OE Setup Prior to RAS During Hidden Refresh Cycle tORD 0 000 ns Last CAS Going Low to First CAS Returning High tCLCH 4 5 5 6 ns 21 Data Output Hold After CAS Returning Low tCOH 3 333 ns Output Disable Delay From WE tWHZ 37 3 737 37 ns Read Setup Time Reference to RAS in CBR tRSR 5 555 ns Read Hold Time Reference to RAS in CBR tRHR 5 555 ns |
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