 |
 |
|
| LMX2119 |
|
||||||||||||||
 NSC
|
| ||||||||||||||
|
1 page 
TLW12686 PRELIMINARY June 1996 LMX2119 19 GHz Power Amplifier General Description The LMX2119 19 GHz Power Amplifier is a monolithic inte- grated power amplifier suitable for use in the Digital Europe- an Cordless Telecommunications (DECT) system as well as other mobile telephony and wireless communications appli- cations It is fabricated using an advanced Gallium Arsenide technology that allows single supply (a3V) operation The LMX2119 consists of two MESFETs cascaded to pro- vide 245 dB of power gain The output power at 36V is a 265 dBm with an input power level of a2 dBm The input VSWR of the power amplifier remains constant in the ON and OFF state The LMX2119 is available in a 16-pin SOIC surface mount plastic package Features Y Single a3V supply operation Y Class A bias l30% power added efficiency Y 245 dB power gain a265 dBm output power Y 50X inputoutput impedance Y 350 mA current consumption at a36V Applications Y Digital European Cordless Telecommunications (DECT) Y Portable wireless communications (PCSPCN cordless) Y Wireless local area networks (WLANs) Y Other wireless communications systems Functional Block Diagram TLW12686 – 1 This data sheet contains the design specifications for product development Specifications may change in any manner without notice C1996 National Semiconductor Corporation RRD-B30M27Printed in U S A http www nationalcom |
