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© 2000 IXYS All rights reserved

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

V

DGR

T

J

= 25

°C to 150°C; R

800

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

11N80

11

A

13N80

13

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

11N80

44

A

13N80

52

A

I

AR

T

C

= 25

°C

11N80

11

A

13N80

13

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

£ I

5

V/ns

T

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

TO-247 AD (IXFH)

TO-204 AA (IXFM)

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Features

• International standard packages

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• Space savings

• High power density

D

G

V

DSS

I

D25

R

DS(on)

IXFH/IXFM11N80

800 V

11 A

0.95

W

IXFH/IXFM13N80

800 V

13 A

0.80

W

t

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

800

V

V

GS(th)

V

DS

= V

2.0

4.5

V

I

GSS

V

±100 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

250

mA

V

T

mA

R

DS(on)

V

11N80

0.95

W

13N80

0.80

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

91528F(7/97)

(TAB)