HN28F101T-15 datasheet(11/18 Pages) ETC

Part #	HN28F101T-15

Description	131072-word x 8-bit CMOS Flash Memory

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AC Characteristics (VCC = 5 V ± 10%, VPP = 12.0 V ± 0.6 V, Ta = 0 to +70°C)

Test condition

HN28F101-12

HN28F101-15

HN28F101-20

—————— —————— ——————

Test

Parameter

Symbol Min

Max

Min

Max

Min

Max

Unit condition

———————————————————————————————————————————————–

Command programming cycle timetCWC

120

—

150

—

200

—

ns

———————————————————————————————————————————————–

Address setup time

tAS

0—

ns

———————————————————————————————————————————————–

Address hold time

tAH

60

—

60

—

60

—

ns

———————————————————————————————————————————————–

Data setup time

tDS

50

—

50

—

50

—

ns

———————————————————————————————————————————————–

Data hold time

tDH

10

—

10

—

10

—

ns

———————————————————————————————————————————————–

CE setup time

tCES

0—

ns

———————————————————————————————————————————————–

CE hold time

tCEH

50

—

50

—

50

—

ns

———————————————————————————————————————————————–

VPP setup time

tVPS

100

—

100

—

100

—

ns

———————————————————————————————————————————————–

VPP hold time

tVPH

100

—

100

—

100

—

ns

———————————————————————————————————————————————–

WE programming pulse width

tWEP

70

—

70

—

80

—

ns

———————————————————————————————————————————————–

WE programming pulse high time

tWEH

40

—

40

—

40

—

ns

———————————————————————————————————————————————–

OE setup time before command

tOEWS 0—

0—

ns

programming

———————————————————————————————————————————————–

OE setup time before verify

tOERS

6—

µs

———————————————————————————————————————————————–

Verify access time

tVA

—

120

—

150

—

200

ns

———————————————————————————————————————————————–

Verify access time in erase

tVAE

—

300

—

300

—

300

ns

———————————————————————————————————————————————–

OE setup time before status polling tOEPS

120

—

120

—

120

—

ns

———————————————————————————————————————————————–

Status polling access time

tSPA

—

120

—

150

—

200

ns

———————————————————————————————————————————————–

Standby time before programming

tPPW

25

—

25

—

25

—

µs

———————————————————————————————————————————————–

Standby time in erase

tET

911

9

11

911

ms

———————————————————————————————————————————————–

Output disable time*3

tDF

040

0

50

060

ns

———————————————————————————————————————————————–

Total erase time in automatic erase*3

tAET

—30

—

30

—30s

———————————————————————————————————————————————–

• Input pulse levels: 0.45 V/2.4 V

• Input rise and fall times: 10 ns

• Output load: 1TTL Gate + 100 pF (Including

scope and jig.)

• Reference levels

for measuring timing: 0.8 V, 2.0 V

11

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