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BS616LV4016EC-70 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616LV4016EC-70 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
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1 / 10 page  Revision 1.1 Jan. 2004 1 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A17 A16 A15 A14 A13 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 BS616LV4016EC BS616LV4016EI R0201-BS616LV4016 POWER DISSIPATION SPEED ( ns ) STANDBY ( I CCSB1 , Max ) ( I CC , Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE 3.0V 3.0V PKG TYPE BS616LV4016DC DICE BS616LV4016EC TSOP2-44 BS616LV4016AC BGA-48-0608 +0 O C to +70O C 2.4V ~ 3.6V 55 / 70 6.0uA 25mA BS616LV4016DI DICE BS616LV4016EI TSOP2-44 BS616LV4016AI BGA-48-0608 -40 O C to +85OC 2.4V ~ 3.6V 55 / 70 8.0uA 27mA Very Low Power/Voltage CMOS SRAM 256K X 16 bit • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 25mA (@55ns) operating current I -grade: 27mA (@55ns) operating current C-grade: 17mA (@70ns) operating current I -grade: 18mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current • High speed access time : -55 55ns (Max.) at Vcc = 2.7~3.6V / 85oC -70 70ns (Max.) at Vcc = 2.4~3.6V / 85oC • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V The BS616LV4016 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 2.7V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers. The BS616LV4016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4016 is available in DICE form , JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package. DESCRIPTION FEATURES Row Decoder Memory Array 2048 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A9 A8 A7 Data Buffer Input Control Gnd Vcc OE WE CE DQ15 DQ0 A0 A13 A14 A15 A1 A2 16 16 16 16 14 128 2048 BLOCK DIAGRAM 2048 22 A17 A16 A10 A12 A6 A11 A3 Address Input Buffer A5 Address Input Buffer . . . . UB . . . . LB PRODUCT FAMILY PIN CONFIGURATIONS Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. BS616LV4016 A4 BSI Operating • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin Vcc = Vcc = 17mA 18mA 55ns 70ns 55ns: 2.7~3.6V 70ns: 2.4~3.6V |
Similar Part No. - BS616LV4016EC-70 |
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Similar Description - BS616LV4016EC-70 |
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