BIPOLARICS, INC.

Part Number B12V105

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

PRODUCT DATA SHEET

0.20000

0.8709

-19

5.888

172

0.0316

80

0.9549

-10

15.4

0.40000

0.8511

-32

4.623

157

0.0478

76

0.9120

-17

13.3

0.60000

0.8128

-45

4.027

142

0.0660

61

0.8511

-25

12.1

0.80000

0.7762

-55

3.388

137

0.0776

59

0.8511

-32

10.6

1.00000

0.7244

-68

3.273

126

0.0876

53

0.7161

-34

10.3

1.20000

0.6760

-80

3.162

122

0.0933

51

0.6998

-37

10.0

1.40000

0.6309

-100

3.235

116

0.1035

48

0.6531

-47

10.2

1.60000

0.5888

-114

3.019

106

0.1071

47

0.6165

-49

9.6

1.80000

0.5754

-124

2.786

102

0.1096

46

0.6456

-51

8.9

2.00000

0.5623

-137

2.722

88

0.1148

46

0.6025

-54

8.7

2.20000

0.5370

-144

2.691

82

0.1174

45

0.5888

-57

8.6

2.40000

0.5248

-165

2.317

86

0.1188

46

0.5370

-63

7.3

2.60000

0.5370

-174

2.264

84

0.1216

48

0.5308

-64

7.1

2.80000

0.5128

178

2.187

78

0.1244

49

0.5188

-70

6.8

3.00000

0.5069

173

1.949

78

0.1258

50

0.4897

-72

5.8

3.20000

0.4954

166

1.883

73

0.1303

51

0.5011

-78

5.5

3.40000

0.5011

162

1.737

70

0.1333

53

0.4677

-81

4.8

3.60000

0.5128

153

1.717

69

0.1348

55

0.4773

-87

4.7

3.80000

0.5432

152

1.566

63

0.1333

57

0.4773

-96

3.9

4.00000

0.5308

152

1.479

64

0.1348

60

0.4677

-93

3.4

4.20000

0.5188

144

1.445

58

0.1380

61

0.5069

-102

3.2

PAGE

2

(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35)

FREQ.

S11

S21

S12

S22

S21

GHz

Mag

Ang

Mag

Ang

Mag

Ang

Mag

Ang

dB

TYPICAL S PARAMETERS:

BIAS CONDITION:

V

CE

=

5

V,

I

C

=

2 mA

S-MATRIX:

Z

S

= 50.0 + J 0.0

Z

L

= 50.0 + J 0.0