AO4408, AO4408L

Symbol

Min

Typ

Max

Units

30

V

0.003

1

5

100

nA

1

1.5

2.5

V

40

A

10.5

14

16

21

13

16.5

m

Ω

30

48

S

0.76

1

V

4.5

A

1020

1200

pF

320

pF

80

pF

0.25

0.5

Ω

10.3

12.5

nC

2.1

nC

3.9

nC

3.9

5.5

ns

36

ns

19.2

30

ns

2.6

5

ns

26

32

ns

18

32

nC

100

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

Reverse Transfer Capacitance

STATIC PARAMETERS

Parameter

Conditions

µA

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

m

Ω

Turn-On Rise Time

Turn-Off DelayTime

Gate resistance

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Gate Drain Charge

any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.