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NTE3300 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE3300
Description  Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE3300
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D Low Saturation Voltage
D Enhancement Mode
D 20V Gate Drive
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Emitter Voltage, VGES
±25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
DC
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms)
130A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC
4.16
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Screw Torque
0.6N
•m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
IGES
VGE = ±25V, VCE = 0
±100
nA
Collector Cutoff Current
ICES
VCE = 400V, VGE = 0
1.0
µA
Collector–Emitter Breakdown Voltage
V(BR)CES IC = 2mA, VGE = 0
400
V
Gate–Emitter Cutoff Voltage
VGE(off)
IC = 1mA, VCE = 5V
4.0
5.0
7.0
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 130A, VGE = 20V (Pulsed)
5.0
8.0
V
Input Capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
1350
pF
Rise Time
tr
VCC = 300V
0.1
0.5
µs
Turn–On Time
ton
0.15
0.50
µs
Fall Time
tf
4.0
6.0
µs
Turn–Off Time
toff
4.5
7.0
µs




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