GSD2004WS

Vishay Semiconductors

formerly General Semiconductor

Document Number 88202

www.vishay.com

14-May-02

1

New Product

High-Voltage Small-Signal Switching Diode

Parameter

Symbol

Value

Unit

Continuous Reverse Voltage

240

V

Peak Repetitive Reverse Voltage

300

V

Peak Repetitive Reverse Current

200

mA

Forward Current (continuous)

225

mA

Peak Repetitive Forward Current

625

mA

Non-Repetitive Peak Forward Current at tp = 1

µs

4.0

A

at tp = 1s

1.0

Power Dissipation

mW

Typical Thermal Resistance Junction to Ambiant Air

R

ΘJA

°C/W

Junction Temperature

150

°C

Storage Temperature Range

–65 to +150

°C

Note: (1) Device on Fiberglass Substrate, see layout on second page

.010 (0.25)

min.

.012 (0.3)

.059 (1.5)

Cathode Band

Top View

.043 (1.1)

Features

• Silicon Epitaxial Planar Diode

• Fast switching diode,especially suited for

applications requiring high voltage capability

SOD-323

Mechanical Data

Case: SOD-323 Plastic Package

Weight: approx. 0.004g

Marking Code: B6

Packaging Codes/Options:

D5/10K per 13” reel (8mm tape), 30K/box

D6/3K per 7” reel (8mm tape), 30K/box

Dimensions in inches

and (millimeters)

Mounting Pad Layout

0.055

(1.40)

0.062

(1.60)