Dual P-Channel Enhancement Mode MOSFET

Copyright

 ANPEC Electronics Corp.

Rev. A.2 - Feb., 2003

www.anpec.com.tw

1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

APM9933

A P M 9933

H a n d ling C ode

Te m p . R a n g e

P a c k a g e C ode

P a ck ag e C o d e

K : S O P -8

O peratin g J u n c tion T e m p . R a ng e

C : -5 5 to 1 5 0 ° C

H a n d ling C ode

T U : T u b e

T R : T a p e & R e e l

A P M 993 3 K :

APM 9 9 3 3

XXXXX

XXXXX - D a te C o d e

Features

Applications

-2.9A , R

-2.6A , R

Low R

DS(ON)

Portable Equipment and Battery Powered

Systems.

Symbol

Parameter

Rating

Unit

V

DSS

Drain-Source Voltage

-20

V

GSS

Gate-Source Voltage

±12

V

I

D

*

Maximum Drain Current – Continuous

-3.5

I

DM

Maximum Drain Current – Pulsed

-16

A

* Surface Mounted on FR4 Board, t

≤ 10 sec.

Ordering and Marking Information

Pin Description

P-Channel MOSFET

1

2

3

45

6

7

8

S1

G1

S2

G2

D 2

D2

D1

D1

G1

S1

D1

D1

G2

S2

D2

D2

SOP

− 8