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2SK3374 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3374 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3374 2002-08-09 5 rth - tw Safe operating area EAS - Tch Pulse width tw (S) Channel temperature (initial) Tch (°C) -15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 W VDD = 90 V, L = 203 mH ÷ ÷ ø ö ç ç è æ - × × × = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 0.001 0.1 1 3 0.3 0.01 10 m 100 m 1 m 10 m 1 10 100 T PDM t Duty = t/T Rth (ch-a) = 96.1°C/W Duty = 0.5 0.1 Single Pulse 0.02 0.0005 0.003 0.03 0.05 0.5 100 m 0.01 0.05 0.2 0.001 0.1 0.01 0.1 1 10 10 100 1000 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous) ID max (pulsed) * 100 ms * DC operation Ta = 25°C 1 ms * VDSS max 1 0 25 30 60 90 150 120 50 75 100 125 150 Drain-source voltage VDS (V) |
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