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TLWR7900 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TLWR7900 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 14 page  www.vishay.com 2 Document Number 83144 Rev. 1.8, 14-Jan-05 TLWB / BG / O / R / TG / W / Y7900 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLWR7900 , TLWO7900 , TLWY7900 TLWTG7900 , TLWBG7900 , TLWB7900 , TLWW7900 Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLWR7900 Parameter Test condition Symbol Value Unit Reverse voltage IR = 10 µAVR 10 V DC Forward current Tamb ≤ 85 °C IF 70 mA Surge forward current tp ≤ 10 µsIFSM 1A Power dissipation Tamb ≤ 85 °C PV 187 mW Junction temperature Tj 125 °C Operating temperature range Tamb - 40 to + 110 °C Storage temperature range Tstg - 55 to + 110 °C Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature 100 °C/ 30 sec. Tsd 260 °C Thermal resistance junction/ ambient with cathode heatsink of 70 mm2 RthJA 200 K/W Thermal resistance junction/pin RthJP 90 K/W Parameter Test condition Symbol Value Unit Reverse voltage IR = 10 µAVR 5V DC Forward current Tamb ≤ 50 °C IF 50 mA Surge forward current tp ≤ 10 µsIFSM 0.1 A Power dissipation Tamb ≤ 50 °C PV 230 mW PV 230 mW PV 230 mW PV 255 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature 100 °C/ 30 sec. Tsd 260 °C Thermal resistance junction/ ambient with cathode heatsink of 70 mm2 RthJA 200 K/W Thermal resistance junction/pin RthJP 90 K/W Parameter Test condition Symbol Min Typ. Max Unit Total flux IF = 70 mA, RthJA = 200 °K/W φ V 1500 2100 3000 mlm Luminous intensity/Total flux IF = 70 mA, RthJA = 200 °K/W IV/φV 0.7 mcd/mlm Dominant wavelength IF = 70 mA, RthJA = 200 °K/W λ d 611 618 634 nm Peak wavelength IF = 70 mA, RthJA = 200 °K/W λ p 624 nm Angle of half intensity IF = 70 mA, RthJA = 200 °K/W ϕ ± 45 deg Total included angle 90 % of Total Flux Captured ϕ 100 deg Forward voltage IF = 70 mA, RthJA = 200 °K/W VF 1.83 2.2 2.67 V |
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