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TLMO2100 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TLMO2100 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 11 page www.vishay.com 2 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS2100 ,TLMO2100 ,TLMY2100 ,TLMG2100 ,TLMP2100 TLMB2100 Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS2100 2) in one Packing Unit I Vmax/IVmin ≤ 2.0 Parameter Test condition Symbol Value Unit Reverse voltage VR 6V DC Forward current Tamb ≤ 60 °C IF 30 mA Surge forward current tp ≤ 10 µsIFSM 0.5 A Power dissipation Tamb ≤ 60 °C PV 95 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature according IPC 9501 Tsd 245 °C Thermal resistance junction/ ambient mounted on PC board (pad size > 5 mm2) RthJA 480 K/W Parameter Test condition Symbol Value Unit Reverse voltage VR 5V DC Forward current Tamb ≤ 60 °C IF 20 mA Surge forward current tp ≤ 10 µsIFSM 0.1 A Power dissipation Tamb ≤ 60 °C PV 90 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature according IPC 9501 Tsd 245 °C Thermal resistance junction/ ambient mounted on PC board (pad size > 5 mm2) RthJA 480 K/W Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 2) IF = 10 mA IV 2.5 7.5 mcd Dominant wavelength IF = 10 mA λ d 624 628 636 nm Peak wavelength IF = 10 mA λ p 640 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF 2.1 3.0 V Reverse voltage IR = 10 µAVR 615 V Junction capacitance VR = 0, f = 1 MHz Cj 15 pF |
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