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PDTA114TEF Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTA114TEF Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page 2004 Aug 02 5 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 k Ω, R2 = open PDTA114T series CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE =0 −−−100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB =0 −−−1 µA VCE = −30 V; IB = 0; Tj = 150 °C −−−50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0 −−−100 nA hFE DC current gain VCE = −5 V; IC = −1 mA 200 −− VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−−150 mV R1 input resistor 7 10 13 k Ω Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz −− 3pF |
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