HMN12816D-70 datasheet(3/9 Pages) ETC

Part #	HMN12816D-70

Description	Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

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HANBit

HMN12816D

URL : www.hbe.co.kr

3

HANBit Electronics Co.,Ltd

Rev. 0.0 (April, 2002)

READ/WRITE FUNCTION

/OE

/WE

/CEL

/CEU

VCC CURRENT

DQ0-DQ7

DQ8-DQ15

CYCLE

PERFORMED

H

X

ICCO

High-Z

Output Disabled

L

H

L

Output

L

H

L

H

Output

High-Z

L

H

L

ICCO

High-Z

Output

Read Cycle

X

L

Input

X

L

H

Input

High-Z

X

L

H

L

ICCO

High-Z

Input

Write Cycle

X

H

ICCS

High-Z

Output Disabled

DATA RETENTION MODE

The HMN12816D provides full functional capability for VCC greater than 4.5 volts and write protects by 4.25volts. Data is

maintained in the absence of VCC without any additional support circuitry. The nonvolatile static RAMs constantly monitor

VCC. Should the supply volt-age decay, the NV SRAM’s automatically write protect themselves, all inputs become "don't

care," and all out-puts become high impedance. As VCC falls below approximately 3.0 volts, a power switching circuit

connects the lithium energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts,

the power switching circuit connects external VCC to RAM and disconnects the lithium energy source.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

CONDITIONS

DC voltage applied on VCC relative to VSS

VCC

-0.3V to 7.0V

DC Voltage applied on any pin excluding VCC

relative to VSS

VT

-0.3V to 7.0V

VT≤ VCC+0.3

Operating temperature

TOPR

0 to 70

°C

Storage temperature

TSTG

-40

°C to 70°C

Temperature under bias

TBIAS

-10

°C to 70°C

Soldering temperature

TSOLDER

260

°C

For 10 second

NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.

Functional operation

should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

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