FEATURES

D TrenchFETr Power MOSFET

D New MICRO FOOTr Chipscale Packaging

Reduces Footprint Area Profile (0.62 mm) and

On-Resistance Per Footprint Area

APPLICATIONS

D Load Switch

D Battery Switch

D Charger Switch

D PA Switch

Si8411DB

Vishay Siliconix

New Product

Document Number: 72444

S-32349—Rev. A, 17-Nov-03

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

−20

−5.9

−20

−5.0

MICRO FOOT

S

G

D

P-Channel MOSFET

32

41

S

DD

G

Bump Side View

Backside View

Device Marking: 8411

xxx = Date/Lot Traceability Code

8411

xxx

Ordering Information: Si8411DB-T1

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

−20

V

Gate-Source Voltage

"12

V

−5.9

−4.3

−4.7

−3.4

A

Pulsed Drain Current

−25

A

−2.5

−1.3

2.77

1.47

W

1.77

0.94

W

Operating Junction and Storage Temperature Range

−55 to 150

VPR

215

_C

IR/Convection

220

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 5 sec

R

35

45

Steady State

72

85

_C/W

Maximum Junction-to-Foot (drain)

Steady State

16

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.