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NTE3102 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE3102 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing pro- vides a means of interrupting the signal with an opaque material, switching the output from an “ON” into an “OFF” state. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Operating Temperature Range, TJ –55 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering, 5sec Max), TL +260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Infrared Emitting Diode Forward Current, IF Continuous 60mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) 3A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage, VR 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation, PE 100mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 1.33mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Phototransistor Power Dissipation, PD 150mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 2.0mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Collector Current, IC 100mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, VCEO 55V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Collector Voltage, VECO 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Emitter Reverse Breakdown Voltage V(BR)R IR = 10µA 6 – – V Forward Voltage VF IF = 60mA – – 1.7 V Reverse Current IR VR = 5V – – 100 nA Capacitance Ci V = 0, f = 1MHz – 30 – pF Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided. |
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