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JAN1N968 Datasheet(PDF) 2 Page - Microsemi Corporation |
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JAN1N968 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 3 page Silicon 500 mW Zener Diodes SCOTTSD A L E DIVISION 1N957B, -1 thru 1N992B, -1 DO-35 ELECTRICAL CHARACTERISTICS* @ 25oC NOMINAL ZENER VOLTAGE (Note 2) VZ ZENER TEST CURRENT IZT MAX. ZENER IMPEDANCE (Note 3) ZZT @ IZT ZZK @ IZK MAX. DC ZENER CURRENT (Note 4) IZM MAX. SURGE CURRENT (Note 5) IZSM MAX. REVERSE LEAKAGE CURRENT IR @ VR MAX. TEMP. COEFFICIENT αVZ JEDEC TYPE NUMBER (Note 1) VOLTS mA OHMS OHMS mA mA mA µA VOLTS %/ oC 1N957B 1N958B 1N959B 1N960B 1N961B 6.8 7.5 8.2 9.1 10 18.5 16.5 15.0 14.0 12.5 4.5 5.5 6.5 7.5 8.5 700 700 700 700 700 1.0 .5 .5 .5 .25 55 50 45 41 38 300 275 250 225 200 150 75 50 25 10 5.2 5.7 6.2 6.9 7.6 +0.05 +0.058 +0.065 +0.068 +0.075 1N962B 1N963B 1N964B 1N965B 1N966B 11 12 13 15 16 11.5 10.5 9.5 8.5 7.8 9.5 11.5 13.0 16 17 700 700 700 700 700 .25 .25 .25 .25 .25 32 31 28 25 24 175 160 150 130 120 5 5 5 5 5 8.4 9.1 9.9 11.4 12.2 +0.076 +0.077 +0.079 +0.082 +0.083 1N967B 1N968B 1N969B 1N970B 1N971B 18 20 22 24 27 7.0 6.2 5.6 5.2 4.6 21 25 29 33 41 750 750 750 750 750 .25 .25 .25 .25 .25 20 18 16 15 13 110 100 90 80 70 5 5 5 5 5 13.7 15.2 16.7 18.2 20.6 +0.085 +0.086 +0.087 +0.088 +0.090 1N972B 1N973B 1N974B 1N975B 1N976B 30 33 36 39 43 4.2 3.8 3.4 3.2 3.0 49 58 70 80 93 1000 1000 1000 1000 1500 .25 .25 .25 .25 .25 12 11 10 9.5 8.8 65 60 55 46 44 5 5 5 5 5 22.8 25.1 27.4 29.7 32.7 +0.091 +0.092 +0.093 +0.094 +0.095 1N977B 1N978B 1N979B 1N980B 1N981B 47 51 56 62 68 2.7 2.5 2.2 2.0 1.8 105 125 150 185 230 1500 1500 2000 2000 2000 .25 .25 .25 .25 .25 7.9 7.4 6.8 6.0 5.5 40 37 35 30 28 5 5 5 5 5 35.8 38.8 42.6 47.1 51.7 +0.095 +0.096 +0.096 +0.097 +0.097 1N982B 1N983B 1N984B 1N985B 1N986B 75 82 91 100 110 1.7 1.5 1.4 1.3 1.1 270 330 400 500 750 2000 3000 3000 3000 4000 .25 .25 .25 .25 .25 5.0 4.6 4.1 3.7 3.3 26 23 21 18 16 5 5 5 5 5 56.0 62.2 69.2 76.0 83.6 +0.098 +0.098 +0.099 +0.11 +0.11 1N987B 1N988B 1N989B 1N990B 1N991B 1N992B 120 130 150 160 180 200 1.0 0.95 0.85 0.80 0.68 0.65 900 1100 1500 1700 2200 2500 4500 5000 6000 6500 7100 8000 .25 .25 .25 .25 .25 .25 3.1 2.7 2.4 2.2 2.0 1.8 15 13 12 11 10 9 5 5 5 5 5 5 91.2 98.8 114.0 121.6 136.8 152.0 +0.11 +0.11 +0.11 +0.11 +0.11 +0.11 * JEDEC Registered Data NOTE 1: The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/- 10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20% tolerance. NOTE 2: Zener voltage ( VZ) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its leads with the inside edge of the mounting clips between .375” and .500” from the body. Mounting clips shall be maintained at a temperature of 25 +8/ -2 oC. NOTE 3: The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents. NOTE 4: The values of IZM are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above VZT which results from zener impedance and the increase in junction temperature as power dissipation approaches 400 mW. In the case of individual diodes IZM is that value of current which results in a dissipation of 400 mW at 75 oC lead temperature at 3/8” from body. NOTE 5: The surge for IZSM is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration. Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 Copyright 2003 10-31-2003 REV B |
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