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VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSD A L E DIVISION 1N5802 thru 1N5806 DESCRIPTION APPEARANCE This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF- 19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. They are also available in surface-mount packages (see separate data sheet for 1N5802US thru 1N5806US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast in both through-hole and surface-mount packages. “A” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N5802 to 1N5806 series • Voidless hermetically sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, JANTXV, and JANS available per MIL-PRF- 19500/477 • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5802US thru 1N5806US) • Ultrafast recovery 2.5 Amp rectifier series 50 to 150V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction Temperature: -65oC to +175oC • Storage Temperature: -65oC to +175oC • Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC • Thermal Resistance: 36 ºC/W junction to lead (L=.375 in) • Thermal Impedance: 4.5oC/W @ 10 ms heating time • Forward Surge Current: 35 Amps @ 8.3 ms half-sine • Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz • Solder temperature: 260ºC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper • MARKING: Body painted and part number, etc. • POLARITY: Cathode indicated by band • Tape & Reel option: Standard per EIA-296 • Weight: 340 mg • See package dimensions on last page ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM BREAKDOWN VOLTAGE (MIN.) @ 100 µA VBR AVERAGE RECTIFIED CURRENT IO1 @ TL=+75ºC (NOTE 1) AVERAGE RECTIFIED CURRENT IO2 @ TA=+55ºC (Note 2) MAXIMUM FORWARD VOLTAGE @ 1 A (8.3 ms pulse) VF REVERSE CURRENT (MAX) @ VRWM IR SURGE CURRENT (MAX) IFSM (NOTE 3) REVERSE RECOVERY TIME (MAX) (NOTE 4) trr VOLTS VOLTS AMPS AMPS VOLTS µA AMPS ns 25 oC 100 oC 25oC 100oC 1N5802 1N5803 1N5804 1N5805 1N5806 50 75 100 125 150 55 80 110 135 160 2.5 2.5 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 0.875 0.875 0.875 0.800 0.800 0.800 1 1 1 1 1 50 50 50 50 50 35 35 35 35 35 25 25 25 25 25 NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC. NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC. NOTE 3: TA = 25 oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 7-16-2004 REV A |
