BS62UV1027PIG10 datasheet(3/10 Pages) BSI

Part #	BS62UV1027PIG10

Description	Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.1

Jan.

2004

3

R0201-BS62UV1027

BSI

BS62UV1027

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

Vcc=2.0V

0.6

VIL

Guaranteed Input Low

Voltage

(2)

Vcc=3.0V

-0.3

(5)

--

0.8

V

Vcc=2.0V

1.4

VIH

Guaranteed Input High

Voltage

(2)

Vcc=3.0V

2.0

--

Vcc+0.3

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

ILO

Output Leakage Current

Vcc = Max, CE1= VIH, CE2= VIL, or

OE = VIH, VI/O = 0V to Vcc

--

1

uA

Vcc = Max, IOL = 0.1mA

Vcc=2.0V

0.2

VOL

Output Low Voltage

Vcc = Max, IOL = 2.0mA

Vcc=3.0V

--

0.4

V

Vcc = Min, IOH = -0.1mA

Vcc=2.0V

Vcc-0.2

VOH

Output High Voltage

Vcc = Min, IOH = -1.0mA

Vcc=3.0V

2.4

--

V

Vcc=2.0V

--

8

ICC

Operating Power Supply

Current

CE1 = VIL, CE2 = VIH,

IDQ = 0mA, F = Fmax

(3)

Vcc=3.0V

--

15

mA

Vcc=2.0V

--

0.1

ICCSB

Standby Current-TTL

CE1 = VIH, or CE2 = VIL,

IDQ = 0mA

Vcc=3.0V

--

0.5

mA

Vcc=2.0V

--

0.05

1.0

ICCSB1

(4)

Standby Current-CMOS

CE1≧Vcc-0.2V or CE2≦0.2V,

VIN≧Vcc-0.2V or VIN≦0.2V

Vcc=3.0V

--

0.10

2.5

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

4. IccSB1(Max.) is 0.5uA/1.3uA at Vcc=2.0V/3.0V and TA=70oC.

5. VIL = -1.5V for pulse width less than 30ns

DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )

1. Vcc = 1.2V, TA = + 25OC

2. t

RC = Read Cycle Time

3. IccDR(Max.) is 0.2uA at TA=70OC.

DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )

LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

CE1

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.2V

≥

CE1

Vcc - 0.2V

≥

LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

1.2

--

V

ICCDR

(3)

Data Retention Current

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

0.03

0.3

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

CE2

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIL

Vcc

VDR ≧ 1.2V

CE2 ≦ 0.2V

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