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EMIF03-SIM01 Datasheet(PDF) 8 Page - STMicroelectronics |
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EMIF03-SIM01 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 11 page 8/11 EMIF03-SIM01 CROSSTALK BEHAVIOR Fig. A7: Crosstalk phenomena RL1 RL2 αβ 1G1 12G2 V+ V αβ 2G2 21G1 V+ V Line 1 Line 2 VG1 VG2 DRIVERS RECEIVERS RG1 RG2 The crosstalk phenomena are due to the coupling between 2 lines. The coupling factor ( β12 or β21 ) increases when the gap across lines decreases, particularly in silicon dice. In the example above the expected signal on load RL2 is α2VG2, in fact the real voltage at this point has got an extra value β21VG1. This part of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into account when the drivers impose fast digital data or high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works with low voltage signal or high load impedance (few k Ω). 1- Digital crosstalk Fig. A8: Digital crosstalk measurements +3V +3V 74HC04 +3V Square Pulse Generator 74HC04 VG1 β21 G1 V B1 C1 B3 C3 ® EMI35 SIM01 Square pulse generator s frequency = 3.3MHz s 0 - 3.3V s Risetime = 30ns |
Similar Part No. - EMIF03-SIM01 |
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Similar Description - EMIF03-SIM01 |
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