CY62157DV18
MoBL2
Document #: 38-05126 Rev. *B
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage
to Ground Potential ......................... –0.2V to VCCMAX + 0.2V
DC Voltage Applied to Outputs
in High-Z State[4] ....................................–0.2V to VCC + 0.2V
DC Input Voltage[4] ................................ –0.2V to VCC + 0.2V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Ambient Temperature (TA)VCC
Industrial
–40
°C to +85°C
1.65V to 1.95V
Product Portfolio
Product
VCC Range(V)
Speed
(ns)
Power Dissipation
Operating, Icc (mA)
Standby, ISB2 (µA)
f = 1 MHz
f = fMAX
Min.
Typ.[5]
Max.
Typ.[5]
Max.
Typ.[5]
Max.
Typ.[5]
Max.
CY62157DV18L
1.65
1.8
1.95
55
1
5
10
20
2
20
70
8152
20
CY62157DV18LL
1.65
1.8
1.95
55
1
5
10
20
2
5
70
8152
5
DC Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
CY62157DV18-55
CY62157DV18-70
Unit
Min.
Typ.[5]
Max.
Min.
Typ.[5]
Max.
VOH
Output HIGH Voltage
IOH = −0.1 mA
VCC = 1.65V
1.4
1.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA
VCC = 1.65V
0.2
0.2
V
VIH
Input HIGH Voltage
1.4
VCC +
0.2
1.4
VCC +
0.2
V
VIL
Input LOW Voltage
–0.2
0.4
–0.2
0.4
V
IIX
Input Leakage Current GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage
Current
GND < VO < VCC, Output
Disabled
–1
+1
–1
+1
µA
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
Vcc = 1.95V,
IOUT = 0 mA,
CMOS level
10
20
8
15
mA
f = 1 MHz
1
5
1
5
ISB1
Automatic CE
Power-down Current –
CMOS Inputs
CE1 > VCC − 0.2V, CE2 <
0.2V, VIN > VCC − 0.2V, VIN
< 0.2V, f = fMAX (Address
and Data Only), f = 0 (OE,
WE, BHE and BLE)
L2
20
2
20
µA
LL
25
25
ISB2
Automatic CE
Power-down Current –
CMOS Inputs
CE1 > VCC − 0.2V, CE2 <
0.2V, VIN > VCC − 0.2V or
VIN < 0.2V, f = 0, VCC =
1.95V
L2
20
2
20
µA
LL
25
25
Capacitance[6]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
6pF
COUT
Output Capacitance
8
pF
Notes:
4.
VIL(min.) = –2.0V for pulse durations less than 20 ns.
5.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
6.
Tested initially and after any design or process changes that may affect these parameters.