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TE28F032B3TA110 Datasheet(PDF) 4 Page - Intel Corporation

Part # TE28F032B3TA110
Description  SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
Download  48 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

TE28F032B3TA110 Datasheet(HTML) 4 Page - Intel Corporation

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SMART 3 ADVANCED BOOT BLOCK
E
4
PRELIMINARY
REVISION HISTORY
Number
Description
-001
Original version
-002
Section 3.4,
VPP Program and Erase Voltages, added
Updated Figure 9:
Automated Block Erase Flowchart
Updated Figure 10:
Erase Suspend/Resume Flowchart (added program to table)
Updated Figure 16:
AC Waveform: Program and Erase Operations (updated notes)
IPPR maximum specification change from ±25
µA to ±50 µA
Program and Erase Suspend Latency specification change
Updated Appendix A:
Ordering Information (included 8 M and 4 M information)
Updated Figure, Appendix D:
Architecture Block Diagram (Block info. in words not
bytes)
Minor wording changes
-003
Combined byte-wide specification (previously 290605) with this document
Improved speed specification to 80 ns (3.0 V) and 90 ns (2.7 V)
Improved 1.8 V I/O option to minimum 1.65 V (Section 3.4)
Improved several DC characteristics (Section 4.4)
Improved several AC characteristics (Sections 4.5 and 4.6)
Combined 2.7 V and 1.8 V DC characteristics (Section 4.4)
Added 5 V VPP read specification (Section 3.4)
Removed 120 ns and 150 ns speed offerings
Moved
Ordering Information from Appendix to Section 6.0; updated information
Moved
Additional Information from Appendix to Section 7.0
Updated figure Appendix B,
Access Time vs. Capacitive Load
Updated figure Appendix C,
Architecture Block Diagram
Moved Program and Erase Flowcharts to Appendix E
Updated
Program Flowchart
Updated
Program Suspend/Resume Flowchart
Minor text edits throughout.
-004
Added 32-Mbit density
Added 98H as a reserved command (Table 4)
A1–A20 = 0 when in read identifier mode (Section 3.2.2)
Status register clarification for SR3 (Table 7)
VCC and VCCQ absolute maximum specification = 3.7 V (Section 4.1)
Combined IPPW and ICCW into one specification (Section 4.4)
Combined IPPE and ICCE into one specification (Section 4.4)
Max Parameter Block Erase Time (tWHQV2/tEHQV2) reduced to 4 sec (Section 4.7)
Max Main Block Erase Time (tWHQV3/tEHQV3) reduced to 5 sec (Section 4.7)
Erase suspend time @ 12 V (tWHRH2/tEHRH2) changed to 5 µs typical and 20 µs
maximum (Section 4.7)
Ordering Information updated (Section 6.0)
Write State Machine Current/Next States Table updated (Appendix A)
Program Suspend/Resume Flowchart updated (Appendix F)
Erase Suspend/Resume Flowchart updated (Appendix F)
Text clarifications throughout
-005
µBGA package diagrams corrected (Figures 3 and 4)
IPPD test conditions corrected (Section 4.4)
32-Mbit ordering information corrected (Section 6)
µBGA package top side mark information added (Section 6)


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