2003 Nov 24

3

Philips Semiconductors

Product specification

PNP transistor/Schottky-diode module

PMEM4020PD

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and

3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.

4. Solder point of collector or cathode tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PNP transistor

collector-base voltage

open emitter

−−40

V

collector-emitter voltage

open base

−−40

V

emitter-base voltage

open collector

−−5V

collector current (DC)

note 1

−−0.75

A

note 2

−−1A

note 3

−−1.3

A

−−2A

peak collector current

−−3A

peak base current

−−1A

total power dissipation

−

295

mW

−

400

mW

−

500

mW

−

1000

mW

junction temperature

−

150

°C

Schottky barrier diode

continuous reverse voltage

−

20

V

continuous forward current

−

1A

non-repetitive peak forward current

t = 8.3 ms half sinewave; JEDEC

method

−

5A

total power dissipation

−

295

mW

−

400

mW

−

500

mW

−

1000

mW

junction temperature

note 2

−

150

°C

Combined device

total power dissipation

−

600

mW

storage temperature

−65

+150

°C

operating ambient temperature

note 2

−65

+150

°C