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PMEM4020PD Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEM4020PD Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page 2003 Nov 24 3 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor VCBO collector-base voltage open emitter −−40 V VCEO collector-emitter voltage open base −−40 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) note 1 −−0.75 A note 2 −−1A note 3 −−1.3 A Ts ≤ 55 °C; note 4 −−2A ICM peak collector current −−3A IBM peak base current −−1A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 295 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; note 3 − 500 mW Ts ≤ 55 °C; note 4 − 1000 mW Tj junction temperature − 150 °C Schottky barrier diode VR continuous reverse voltage − 20 V IF continuous forward current − 1A IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method − 5A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 295 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; note 3 − 500 mW Ts ≤ 55 °C; note 4 − 1000 mW Tj junction temperature note 2 − 150 °C Combined device Ptot total power dissipation Tamb =25 °C; note 2 − 600 mW Tstg storage temperature −65 +150 °C Tamb operating ambient temperature note 2 −65 +150 °C |
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