NTE3032

Phototransistor Detector

NPN–Si, Visible & IR

Description:

The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in

industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications

or any design requiring radiation sensitivity and stable characteristics.

Features:

D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application

D External Base for Added Control

D Annular Passivated Structure for Stability and Reliability

D Popular TO18 Type Package for Easy Handling and Mounting

30V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25

°C

1.43mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Characteristics

Collector Dark Current

–

–

100

nA

Collector–Base Breakdown Voltage

80

–

–

V

Emitter–Collector Breakdown Voltage

5

–

–

V

Optical Characteristics

Light Current

8

–

–

mA

Photo Current Rise Time

–

15

–

µs

Photo Current Fall Time

Note 2

–

15

–

µs

temperature of 2870 K.

Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium

arsenide) light–emitting diode (

λ ∼ µm) with a pulse width equal to or greater than 10µs,