MJB44H11T4 datasheet(1/6 Pages) ONSEMI

Part #	MJB44H11T4

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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December, 2003 − Rev. 1

1

Publication Order Number:

MJB44H11/D

MJB44H11 (NPN),

MJB45H11 (PNP)

Preferred Devices

Complementary

Power Transistors

D2PAK for Surface Mount

. . . for general purpose power amplification and switching such as

output or driver stages in applications such as switching regulators,

converters and power amplifiers.

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94, V−O @ 0.125 in

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

80

Vdc

Emitter−Base Voltage

VEB

5

Vdc

Collector Current − Continuous

− Peak

IC

10

20

Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25

°C

PD

50

1.67

Watts

W/

°C

Total Power Dissipation

@ TA = 25°C

Derate above 25

°C

PD

2.0

0.016

Watts

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 55 to

150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

2.5

°C/W

Thermal Resistance, Junction to Ambient

RθJA

75

°C/W

Device

Package

Shipping†

ORDERING INFORMATION

MJB44H11

D2PAK

CASE 418B

STYLE 1

50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM

B4xH11

YWW

SILICON POWER

TRANSISTORS

10 AMPERES

80 VOLTS

50 WATTS

Y

= Year

WW

= Work Week

B4xH11

= Specific Device Code

x

= 4 or 5

MJB44H11T4

D2PAK

800/Tape & Reel

MJB45H11

D2PAK

50 Units/Rail

MJB45H11T4

D2PAK

800/Tape & Reel

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

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