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DF3A6.8LFU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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DF3A6.8LFU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page DF3A6.8LFU 2002-01-16 1 TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.8LFU Diodes for Protecting Against ESD · Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. · Zener voltage correspond to E24 Series. · Low total capacitance: CT = 6.0 pF (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Power dissipation P 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 to 125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Zener voltage VZ IZ = 5 mA 6.5 6.8 7.1 V Dynamic impedance ZZ IZ = 5 mA ¾ ¾ 50 W Knee dynamic impedance ZZK IZ = 0.5 mA ¾ ¾ 100 W Reverse current IR VR = 5 V ¾ ¾ 0.5 mA Total capacitance CT VR = 0 V, f = 1 MHz ¾ 6.0 ¾ pF Guaranteed Level of ESD Immunity Marking Equivalent Circuit (top view) Test Condition ESD Immunity Level IEC61000-4-2 (contact discharge) ±8 kV Unit: mm JEDEC ― JEITA ― TOSHIBA 1-2P1A C U Q1 Q2 |
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