DF3A6.8LFU

2002-01-16

1

TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type

DF3A6.8LFU

Diodes for Protecting Against ESD

· Because two devices are mounted on an ultra compact package, it is

possible to allow reducing the number of the parts and the mounting

cost.

· Zener voltage correspond to E24 Series.

==== 25°C)

Characteristics

Symbol

Rating

Unit

Power dissipation

P

200

mW

Junction temperature

125

°C

Storage temperature range

-55 to 125

°C

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

6.5

6.8

7.1

V

Dynamic impedance

¾

¾

50

W

Knee dynamic impedance

¾

¾

100

W

Reverse current

¾

¾

0.5

mA

Total capacitance

¾

6.0

¾

pF

Guaranteed Level of ESD Immunity

Marking

Equivalent Circuit

(top view)

Test Condition

ESD Immunity Level

IEC61000-4-2

(contact discharge)

±8 kV

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-2P1A

C U

Q1

Q2