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NTE2959 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain–Source Voltage (VGS = 0V), VDSS 900V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate–Source Voltage (VDS = 0V), VGS ±30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Current, ID Continuous 5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed 15A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation, PD 30W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Channel Temperature Range, Tch –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Channel–to–Case, Rth(ch–c) 4.17 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Isolation Voltage, VISO 2000V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (Tch = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS VDS = 0V, ID = 1mA 900 – – V Gate–Source Breakdown Voltage V(BR)GSS VDS = 0V, IG = ±100µA ±30 – – V Gate–Source Leakage IGSS VGS = ±25V, VDS = 0V – – ±10 µA Zero Gate Voltage Drain Current IDSS VDS = 900V, VGS = 0 – – 1.0 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 2A – 2.15 2.80 Ω Drain–Source On–State Voltage VDS(on) VGS = 10V, ID = 2A – 4.3 5.6 V Forward Transfer Admittance |yfs| VGS = 10V, ID = 2A 3.0 5.0 – S |
