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| NTE2933 |
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Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 400 – – V Breakdown Voltage Temperature Coefficient ∆V(BR)DSS/ ∆TJ ID = 250µA – 0.50 – V/ °C Gate Threshold Voltage VGS(th) VDS = 5V, ID = 250µA 2.0 – 4.0 V Gate–Source Leakage Forward IGSS VGS = 30V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –30V – – –100 nA Drain–to–Source Leakage Current IDSS VDS = 400V – – 10 µA VDS = 320V, TC = +150°C – – 100 µA Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 4A, Note 4 – – 0.55 Ω Forward Transconductance gfs VDS = 50V, ID = 4A, Note 4 – 7.05 – mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 1180 1530 pF Output Capacitance Coss – 175 205 pF Reverse Transfer Capacitance Crss – 80 95 pF Turn–On Delay Time td(on) VDD = 200V, ID = 10A, RG = 9.1Ω, – 18 50 ns Rise Time tr Note 4, Note 5 – 21 55 ns Turn–Off Delay Time td(off) – 78 170 ns Fall Time tf – 28 65 ns Total Gate Charge Qg VGS = 10V, ID = 10A, VDS = 320V, – 58 75 nC Gate–Source Charge Qgs Note 4, Note 5 – 8.1 – nC Gate–Drain (“Miller”) Charge Qgd – 31.3 – nC Source–Drain Diode Ratings and Characteristics Continuous Source Current IS (Body Diode) – – 8 A Pulse Source Current ISM (Body Diode) Note 1 – – 44 A Diode Forward Voltage VSD TJ = +25°C, IS = 8A, VGS = 0V, Note 4 – – 1.5 V Reverse Recovery Time trr TJ = +25°C, IF = 10A, diF/dt = 100A/µs, – 315 – ns Reverse Recovery Charge Qrr Note 4 – 2.84 – µC Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 250 µs, Duty Cycle ≤ 2%. Note 5. Essentially independent of operating temperature. |
