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DS1258W-150-IND Datasheet(PDF) 7 Page - Dallas Semiconductor |
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DS1258W-150-IND Datasheet(HTML) 7 Page - Dallas Semiconductor |
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7 / 9 page  DS1258W 7 of 9 POWER-DOWN/POWER-UP CONDITION POWER-DOWN/POWER-UP TIMING (tA: See Note 10) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES VCC Fail Detect to CE and WE Inactive tPD 1.5 ms 11 VCC slew from VTP to 0V tF 150 ms VCC slew from 0V to VTP tR 150 ms VCC Valid to CE and WE Inactive tPU 2ms VCC Valid to End of Write Protection tREC 125 ms (tA = +25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data Retention Time tDR 10 years 9 WARNING: Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode. |
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